IBM has introduced what it describes as the world’s first chip technology below 1 nanometer, designed to fit nearly 100 ...

Developers of gallium oxide power devices should draw on lessons learnt from the pioneers of compound semiconductor MOSFETs.

Inside computer chips are billions of tiny transistors made from silicon. But the material is approaching its limits. In an effort to build smaller, more capable devices, researchers are exploring how ...

Abstract: Random telegraph noise (RTN), primarily a gate dielectric-semiconductor interfacial phenomenon in field-effect transistors, is an important parameter of interest for downscaled devices. The ...

Researchers have created a new theoretical framework that shows how memory-preserving "memtransistors" could overcome the intrinsic limits in efficiency faced by conventional semiconductor transistors ...

As the global semiconductor industry approaches the physical limits of transistor scaling, Huawei has proposed a new framework for the post-Moore era through its recently introduced "Tau (τ) Law" and ...

We have updated our Privacy Policy. Please review to learn more. By continuing to use our services, you agree to these updates. By Jeff Schogol Published May 5, 2026 ...

ETRI 0.5um CMOS MPW Std-Cell Design-Kit. Contribute to GoodKook/ETRI-0.5um-CMOS-MPW-Std-Cell-DK development by creating an account on GitHub.

The radiation hardening method involves simplifying transistor layouts, replacing radiation-sensitive components with passive inductors, and enlarging transistor dimensions. This approach reduces ...

Diffusing oxygen into 2D materials can improve adhesion properties. Channel-last processes can preserve most of the traditional gate-all-around process flow. Dual-gate MoS 2 FETs with graphene ...

The semiconductor industry is shifting at 2nm from transistor scaling to chiplet-based architectures and advanced packaging. Performance gains are increasingly driven by heterogeneous integration ...